SiPhデバイスの微細構造分析
シリコンフォトニクスデバイスの損失点の位置を5umの高い分解能で検出できます。
概要
SPA-110は、santec波長可変レーザ（TSLシリーズ）のアドオンモジュールとして機能し、フォトニクスデバイス評価に要求される3つの機能（反射点計測、導波路伝搬損失計測、波長依存損失計測）を提供する分析装置です。測定距離を従来機（SPA-100）の6倍以上の30mまで拡大し、測定距離に余裕をもってご利用いただけるようなりました。また、損失測定ダイナミックレンジを従来機より10dB改善し80dBまで拡大したことで、より微弱な反射点も検出可能となっています。従来機と同じ5μmの高い位置分解能を備えており、シリコンフォトニクス及び小型フォトニクスデバイスの開発や生産など様々なアプリケーションで理想的なツールとなっています。
80dBを超える広いダイナミックレンジを実現
光コヒーレント検出技術を採用したことにより、1 回の波長掃引で 80dBを超える広いダイナミックレンジで、かつ、160nmの広い波長範囲で波長依存損失(WDL)が測定できます。
測定距離を 30m まで拡大
測定距離を従来機（SPA-100）の6倍以上の30mまで拡大し、測定距離に余裕をもってご利用いただけます。
評価、分析が容易な専用ソフトウェア付属
異なる材質の屈折率を定義し、反射点を分析や導波路の損失量を計算します。
データの保存はもちろん、データの読み込み分析も可能です。
アライメント用に光パワーメータ接続ポート付属
SPA-110はアライメント用に光パワーメータを接続するポートを標準で付属しています。
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